Estimation of digital single event transient pulse-widths in logic cells from high-energy heavy-ion-induced transient current in a single MOSFET

Makino, Takahiro; Onoda, Shinobu; Hirao, Toshio; Oshima, Takeshi; Kobayashi, Daisuke*; Ikeda, Hirokazu*; Hirose, Kazuyuki*

Proceedings of 9th International Workshop on Radiation Effects on Semiconductor Devices for Space Applications (RASEDA-9), p.169 - 172, 2010/10

Digital Single Event Transient (DSET) pulse-widths in an inverter cell fabricated with the 0.2 mm FD-SOI process were estimated from high-energy heavy-ion-induced transient current in a single n-type MOSFET fabricated with the 0.2 mm FD-SOI process. We verified that the estimation method is applicable to the DSET pulse-widths estimation in the case of high-energy heavy-ion irradiation.

Laser modification aiming at the enhancement of local electrical conductivities in SiC

Deki, Manato; Ito, Takuto*; Tomita, Takuro*; Matsuo, Shigeki*; Hashimoto, Shuichi*; Kitada, Takahiro*; Isu, Toshiro*; Onoda, Shinobu; Oshima, Takeshi

Proceedings of 9th International Workshop on Radiation Effects on Semiconductor Devices for Space Applications (RASEDA-9), p.218 - 221, 2010/10

Time-dependent collected charges of 6H-SiC pn diodes measured using alpha particles

Iwamoto, Naoya; Onoda, Shinobu; Makino, Takahiro; Oshima, Takeshi; Kojima, Kazutoshi*; Koizumi, Atsushi*; Uchida, Kazuo*; Nozaki, Shinji*

Proceedings of 9th International Workshop on Radiation Effects on Semiconductor Devices for Space Applications (RASEDA-9), p.222 - 225, 2010/10

Development of a uniform beam irradiation system by the nonlinear focusing method

Yuri, Yosuke; Yuyama, Takahiro; Ishizaka, Tomohisa; Ishibori, Ikuo; Okumura, Susumu

Proceedings of 9th International Workshop on Radiation Effects on Semiconductor Devices for Space Applications (RASEDA-9), p.121 - 124, 2010/10

Change in current induced from silicon carbide metal-oxide-semiconductor capacitors by oxygen ions

Oshima, Takeshi; Iwamoto, Naoya; Onoda, Shinobu; Makino, Takahiro; Deki, Manato; Nozaki, Shinji*

Proceedings of 9th International Workshop on Radiation Effects on Semiconductor Devices for Space Applications (RASEDA-9), p.85 - 88, 2010/10

Characterization of microdose damage caused by single heavy ion observed in trench type power MOSFETs

Ikeda, Naomi*; Kuboyama, Satoshi*; Maru, Akifumi*; Hirao, Toshio; Abe, Hiroshi; Tamura, Takashi*

Proceedings of 9th International Workshop on Radiation Effects on Semiconductor Devices for Space Applications (RASEDA-9), p.163 - 166, 2010/10

The trench structure showed an anomalously large degradation by heavy ion irradiation. For the trench structure, ions irradiated normal to the chip surface traverse the gate oxide along the entire length of the channel. Therefore, there is a possibility that the trapped holes resulting from the ion traverse introduce the anomalously large leakage current path. This phenomenon is apparently attributable to the microdose effect. In the previous report, the microdose effect was identified on both trench and planner type of power MOSFETs by real-time measurement of the threshold voltage shift during the heavy ion irradiation with very long range. In this study, detailed characterization of the microdose effects was carried out with several in species. As a result, several damage parameters introduced in the gate oxide by a single ion, such as physical damage size and trapped hole density in the damage region were estimated.

Evaluation of soft errors using nuclear probes in SOI SRAM with body-tie structure fabricated by partial trench isolation

Abo, Satoshi*; Masuda, Naoyuki*; Wakaya, Fujio*; Onoda, Shinobu; Makino, Takahiro; Hirao, Toshio; Oshima, Takeshi; Iwamatsu, Toshiaki*; Oda, Hidekazu*; Takai, Mikio*

Proceedings of 9th International Workshop on Radiation Effects on Semiconductor Devices for Space Applications (RASEDA-9), p.72 - 75, 2010/10

no abstracts in English

Electrical characteristics of Co -ray irradiated pentacene-based organic thin film field effect transistors

Cai, L.*; Hirao, Toshio; Yano, Hiroaki*; Duan, Z.*; Takayanagi, Hideharu*; Ueki, Hideharu*; Oshima, Takeshi; Nishioka, Yasushiro*

Proceedings of 9th International Workshop on Radiation Effects on Semiconductor Devices for Space Applications (RASEDA-9), p.176 - 178, 2010/10

no abstracts in English